MMBT5401 [BL Galaxy Electrical]
PNP General Purpose Transistor; PNP通用晶体管型号: | MMBT5401 |
厂家: | BL Galaxy Electrical |
描述: | PNP General Purpose Transistor |
文件: | 总3页 (文件大小:184K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
PNP General Purpose Transistor
MMBT5401
FEATURES
Pb
Lead-free
z
Epitaxial planar die construction.
Complementary NPN type available
(MMBT5551).
z
z
Also available in lead free version.
APPLICATIONS
z
Ideal for medium power amplification and switching
SOT-23
ORDERING INFORMATION
Type No.
Marking
2L
Package Code
MMBT5401
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
UNIT
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
Collector dissipation
junction and storage temperature
-160
-150
-5
V
V
-0.6
A
PC
0.3
W
°C
Tj ,Tstg
-55-150
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Parameter
Test conditions
MIN. MAX. UNIT
Collector-base breakdown voltage
IC=-100μA,IE=0
-160
-150
-5
Collector-emitter breakdown voltage IC=-1mA,IB=0
Emitter-base breakdown voltage
collector cut-off current
IE=-10μA,IC=0
IE = 0; VCB = -120V
IC = 0; VEB = -4V
VCE = -5V; IC= -1mA
-
-
-0.1
-0.1
-
μA
μA
IEBO
emitter cut-off current
50
60
50
-
hFE
DC current gain
V
V
CE = -5V;IC = -10mA
CE = -5V;IC = -50 mA
250
-
VCE(sat)
VBE(sat)
collector-emitter saturation voltage
base-emitter saturation voltage
IC = -50 mA; IB = -5 mA
IC = -50 mA; IB = -5 mA
IC = -10mA; VCE = -5V;
f = 30MHz
-0.5
-1
V
V
-
fT
transition frequency
100
-
MHz
Document number: BL/SSSTC075
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
PNP General Purpose Transistor
MMBT5401
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC075
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
PNP General Purpose Transistor
MMBT5401
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
SOT-23
A
Dim
A
Min
2.85
1.25
Max
2.95
1.35
E
B
K
B
C
D
E
1.0Typical
0.37
0.35
1.85
0.02
0.43
0.48
1.95
0.1
J
D
G
H
J
G
H
0.1Typical
C
K
2.35
2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
Device
Package
SOT-23
Shipping
MMBT5401
3000/Tape&Reel
Document number: BL/SSSTC075
Rev.A
www.galaxycn.com
3
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Small Signal Bipolar Transistor, 0.2A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
DIODES
MMBT5401-T1
Small Signal Bipolar Transistor, 0.5A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
SAMSUNG
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